GROWTH BY LPE OF ND-YAG SINGLE-CRYSTAL LAYERS FOR WAVE-GUIDE LASER APPLICATIONS

被引：29
作者：
FERRAND, B
PELENC, D
CHARTIER, I
WYON, C
机构：
[1] LETI (CEA - Technologies Avancées), DOPT-CENG, F-38041 Grenoble Cedex
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 128卷 / 1-4期
关键词：
D O I：
10.1016/S0022-0248(07)80079-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Nd:YAG layers, for waveguide laser applications, have been grown by liquid phase epitaxy on [111] YAG substrates from a saturated PbO/B2O3 flux using the horizontal dipping technique. The influence of melt composition on growth conditions is discussed. Some substitutions (gallium, lutetium) were studied with the purpose of optimizing the waveguide properties.
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收藏
页码：966 / 969
页数：4
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