EXCITED-STATES OF DONOR BOUND EXCITONS IN GAP

被引：7

作者：

ELLIOTT, KR

MCGILL, TC

机构：

来源：

PHYSICAL REVIEW B | 1980年 / 21卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.21.2426

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2426 / 2431

页数：6

共 13 条

[1] SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS [J].

BALDERESCHI, A ;

LIPARI, NO .

PHYSICAL REVIEW B, 1973, 8 (06) :2697-2709

[2] LOW-LYING EXCITED-STATES OF THE BOUND EXCITON IN A SPHERICAL MODEL [J].

CHANG, YC ;

MCGILL, TC .

SOLID STATE COMMUNICATIONS, 1979, 32 (04) :319-322

[3]

CHANG YF, UNPUBLISHED

[4] EXCITED-STATES OF EXCITONS BOUND TO NITROGEN PAIRS IN GAP [J].

COHEN, E ;

STURGE, MD .

PHYSICAL REVIEW B, 1977, 15 (02) :1039-1051

[5] ABSORPTION AND LUMINESCENCE OF EXCITONS AT NEUTRAL DONORS IN GALLIUM PHOSPHIDE [J].

DEAN, PJ .

PHYSICAL REVIEW, 1967, 157 (03) :655-&

[6]

DISHMAN JM, 1971, J APPL PHYS, V43, P4693

[7] ELECTRON CORRELATION AND BOUND EXCITONS IN SEMICONDUCTORS [J].

HERBERT, DC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (17) :3327-3344

[8]

KIRCZENOW G, 1977, CAN J PHYS, V55, P1781

[9]

LIGHTOWLERS EC, 1977, J PHYS C, V10, P2713

[10] BINDING OF AN EXCITON TO A NEUTRAL ACCEPTOR [J].

PAN, DS ;

SMITH, DL ;

MCGILL, TC .

SOLID STATE COMMUNICATIONS, 1976, 18 (11-1) :1557-1560

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