ENERGY STATES OF OVERLAPPING IMPURITY CARRIERS IN SEMICONDUCTORS

被引：31

作者：

ERGINSOY, C

机构：

来源：

PHYSICAL REVIEW | 1952年 / 88卷 / 04期

关键词：

D O I：

10.1103/PhysRev.88.893

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：893 / 894

页数：2

共 5 条

[1]

CASTELLAN GW, 1951, P READING C SEMICOND, P8

[2] ON THE MECHANISM OF IMPURITY BAND CONDUCTION IN SEMICONDUCTORS [J].

ERGINSOY, C .

PHYSICAL REVIEW, 1950, 80 (06) :1104-1105

PINCHERLE, L .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1951, 64 (379) :663-664

[4]

WHITTAKER ET, 1950, MODERN ANAL, P338

[5] On the possibility of a metallic modification of hydrogen [J].

Wigner, E ;

Huntington, HB .