BROAD-BAND 1.5 MU-M GAINASP TRAVELING-WAVE LASER-AMPLIFIER WITH HIGH-SATURATION OUTPUT POWER

被引:31
作者
SAITOH, T
MUKAI, T
机构
关键词
COATINGS - Antireflection Coatings - LASERS; SEMICONDUCTOR - SEMICONDUCTING GALLIUM ARSENIDE;
D O I
10.1049/el:19870153
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 1. 5 mu m GaInAsP traveling-wave amplifier (TWA), which has a residual facet reflectivity of 0. 04%, is realized through the application of SiO//x antireflection coatings on both facets. The TWA has wide signal gain spectra with undulation of 1. 5 db within one free spectral range for a 24. 5 db signal gain. The saturation output of the TWA for a 20 db signal gain is plus 7 dbm, which is 20 db greater than that provided by the Fabry-Perot amplifier.
引用
收藏
页码:218 / 219
页数:2
相关论文
共 8 条
[1]  
Adams M. J., 1985, IEE Proceedings J (Optoelectronics), V132, P58, DOI 10.1049/ip-j.1985.0012
[2]   GAIN MEASUREMENTS OF INGAASP 1.5-MU-M OPTICAL AMPLIFIERS [J].
EISENSTEIN, G ;
JOPSON, RM ;
LINKE, RA ;
BURRUS, CA ;
KOREN, U ;
WHALEN, MS ;
HALL, KL .
ELECTRONICS LETTERS, 1985, 21 (23) :1076-1177
[3]   PERFORMANCE PREDICTIONS FROM A NEW OPTICAL AMPLIFIER MODEL [J].
HENNING, ID ;
ADAMS, MJ ;
COLLINS, JV .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) :609-613
[4]  
MUKAI T, 1983, REV ELEC COMMUN LAB, V31, P340
[5]   GAIN, FREQUENCY BANDWIDTH, AND SATURATION OUTPUT POWER OF ALGAAS DH LASER-AMPLIFIERS [J].
MUKAI, T ;
YAMAMOTO, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (06) :1028-1034
[6]   THEORETICAL-ANALYSIS AND FABRICATION OF ANTIREFLECTION COATINGS ON LASER-DIODE FACETS [J].
SAITOH, T ;
MUKAI, T ;
MIKAMI, O .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (02) :288-293