REACTIVE ION ETCHING FOR VLSI

被引：45

作者：

EPHRATH, LM

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 11期

关键词：

D O I：

10.1109/T-ED.1981.20607

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1315 / 1319

页数：5

共 15 条

[1]

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[2]

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[4] INTERFACE EFFECTS AND HIGH CONDUCTIVITY IN OXIDES GROWN FROM POLYCRYSTALLINE SILICON [J].

DIMARIA, DJ ;

KERR, DR .

APPLIED PHYSICS LETTERS, 1975, 27 (09) :505-507

[5] RADIATION-DAMAGE IN SILICON DIOXIDE FILMS EXPOSED TO REACTIVE ION ETCHING [J].

DIMARIA, DJ ;

EPHRATH, LM ;

YOUNG, DR .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4015-4021

[6]

EPHRATH L, UNPUBLISHED

[7] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J].

EPHRATH, LM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) :1419-1421

[8]

EPHRATH LM, 1979, EL SOC EXT ABSTR, V79, P772

[9] PLASMA REACTOR DESIGN FOR SELECTIVE ETCHING OF SIO2 ON SI [J].

HEINECKE, RAH .

SOLID-STATE ELECTRONICS, 1976, 19 (12) :1039-1040

[10] 1 MU-M MOSFET VLSI TECHNOLOGY .5. SINGLE-LEVEL POLYSILICON TECHNOLOGY USING ELECTRON-BEAM LITHOGRAPHY [J].

HUNTER, WR ;

EPHRATH, L ;

GROBMAN, WD ;

OSBURN, CM ;

CROWDER, BL ;

CRAMER, A ;

LUHN, HE .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :275-281

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