THE GROWTH AND CHARACTERIZATION OF VERY THIN SILICON DIOXIDE FILMS

被引:74
作者
ADAMS, AC
SMITH, TE
CHANG, CC
机构
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D O I
10.1149/1.2130002
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:1787 / 1794
页数:8
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