BAND-TO-BAND AUGER RECOMBINATION EFFECT ON INGAASP LASER THRESHOLD

被引：137
作者：
SUGIMURA, A
机构：
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 05期
关键词：
D O I：
10.1109/JQE.1981.1071190
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：627 / 635
页数：9
相关论文
共 38 条
[1]   THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION [J].
ADAMS, AR ;
ASADA, M ;
SUEMATSU, Y ;
ARAI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L621-L624
[2]   GAIN-FREQUENCY-CURRENT RELATION FOR PB1-X SNX TE DOUBLE HETEROSTRUCTURE LASERS [J].
ANDERSON, WW .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (07) :532-543
[3]  
[Anonymous], 1966, SEMICONDUCTORS SEMIM
[4]   1.11-1.67 MU-M (100) GAINASP-INP INJECTION-LASERS PREPARED BY LIQUID-PHASE EPITAXY [J].
ARAI, S ;
SUEMATSU, Y ;
ITAYA, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :197-205
[5]   RECOMBINATION IN SEMICONDUCTORS BY A LIGHT HOLE AUGER TRANSITION [J].
BEATTIE, AR ;
SMITH, G .
PHYSICA STATUS SOLIDI, 1967, 19 (02) :577-&
[6]  
BEROLO O, 1972, 11TH P INT C PHYS SE, P1420
[7]  
Bogatov A. P., 1975, Soviet Journal of Quantum Electronics, V4, DOI 10.1070/QE1975v004n10ABEH011746
[8]   COULOMB EFFECTS ON GAIN SPECTRUM OF SEMICONDUCTORS [J].
BRINKMAN, WF ;
LEE, PA .
PHYSICAL REVIEW LETTERS, 1973, 31 (04) :237-240
[9]   CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J].
CASEY, HC ;
STERN, F .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :631-643
[10]   BACKGROUND CARRIER CONCENTRATION AND ELECTRON-MOBILITY IN LPE IN1-XGAXASYP1-Y LAYERS [J].
GREENE, PD ;
WHEELER, SA ;
ADAMS, AR ;
ELSABBAHY, AN ;
AHMAD, CN .
APPLIED PHYSICS LETTERS, 1979, 35 (01) :78-80
1234