THE ELECTRONIC-STRUCTURE OF CLEAVED SILICON(111) SURFACES FOLLOWING ADSORPTION OF ALUMINUM

被引：16

作者：

PARKE, AW

MCKINLEY, A

WILLIAMS, RH

SRIVASTAVA, GP

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1980年 / 13卷 / 14期

关键词：

D O I：

10.1088/0022-3719/13/14/005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L369 / L374

页数：6

共 24 条

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[14]

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[18] SURFACE-STATES AND THE SURFACE-STRUCTURE OF CLEAVED SILICON [J].

PARKE, AW ;

MCKINLEY, A ;

WILLIAMS, RH .

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[19]

PETROFF Y, UNPUBLISHED

[20] SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATIONS FOR SI (111) SURFACES - UNRECONSTRUCTED (1X1) AND RECONSTRUCTED (2X1) MODEL STRUCTURES [J].

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