JUNCTION FORMATION WITH PURE AND DOPED POLYACETYLENE

被引：100

作者：

OZAKI, M ^{[1
]}

PEEBLES, DL ^{[1
]}

WEINBERGER, BR ^{[1
]}

CHIANG, CK ^{[1
]}

GAU, SC ^{[1
]}

HEEGER, AJ ^{[1
]}

MACDIARMID, AG ^{[1
]}

机构：

[1] UNIV PENN,RES STRUCT MATTER LAB,PHILADELPHIA,PA 19104

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 01期

关键词：

D O I：

10.1063/1.90902

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A variety of rectifying junctions have been fabricated using doped and undoped (CH)x. Schottky diodes formed between metallic AsF 5-doped (CH)x and n-type semiconductors indicate high [CH(AsF5)y]x electronegativity. The p-type character of undoped trans- (CH)x is confirmed by Schottky-barrier formation with low-work-function metals. An undoped p- (CH)x: n-ZnS heterojunction has been demonstrated with an open-circuit voltage of 0.8 V. These results point to the potential of (CH)x as a photosensitive material for use in solar-cell applications.

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页码：83 / 85

页数：3

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