EMISSION-SPECTRA OF SIF3

被引：11

作者：

SUTO, M ^{[1
]}

HAN, JC ^{[1
]}

LEE, LC ^{[1
]}

CHUANG, TJ ^{[1
]}

机构：

[1] IBM CORP,ALMADEN RES CTR,SAN JOSE,CA 95120

来源：

JOURNAL OF CHEMICAL PHYSICS | 1989年 / 90卷 / 05期

关键词：

D O I：

10.1063/1.455935

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：2834 / 2835

页数：2

共 29 条

[1]

BEENAKKER CIM, 1980, 157TH M EL SOC ST LO, V80, P330

[2]

Chase Jr M. W., 1985, J PHYS CHEM REF D S1, V14

[3] CHEMICAL PROCESSES INVOLVED IN THE ETCHING OF SILICON BY XENON DIFLUORIDE [J].

DAGATA, JA ;

SQUIRE, DW ;

DULCEY, CS ;

HSU, DSY ;

LIN, MC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1495-1500

[4] ROTATIONAL ANALYSIS OF ABSORPTION BANDS IN 2266 A SYSTEM OF SIF2 [J].

DIXON, RN .

JOURNAL OF MOLECULAR SPECTROSCOPY, 1970, 36 (02) :192-&

[5]

Dolzhikov V. S., 1978, Soviet Journal of Quantum Electronics, V8, P373, DOI 10.1070/QE1978v008n03ABEH010025

[6] STUDIES OF CHEMI-LUMINESCENCE ACCOMPANYING FLUORINE ATOM ETCHING OF SILICON [J].

DONNELLY, VM ;

FLAMM, DL .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5273-5276

[7] THE REACTION OF FLUORINE-ATOMS WITH SILICON [J].

FLAMM, DL ;

DONNELLY, VM ;

MUCHA, JA .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3633-3639

[8]

HAAS Y, 1981, PHOTOSELECTIVE CHEM

[9] IONIZATION POTENTIALS ELECTRONIC AND MOLECULAR STRUCTURES OF METAL HALIDES FROM EXTENDED HUCKEL THEORY [J].

HASTIE, JW ;

MARGRAVE, JL .

JOURNAL OF PHYSICAL CHEMISTRY, 1969, 73 (04) :1105-&

[10] CO2 LASER-INDUCED DISSOCIATION OF SIF4 MOLECULES INTO ELECTRONICALLY EXCITED FRAGMENTS [J].

ISENOR, NR ;

MERCHANT, V ;

HALLSWORTH, RS ;

RICHARDSON, MC .

CANADIAN JOURNAL OF PHYSICS, 1973, 51 (12) :1281-1287

← 1 2 3 →