MOLECULAR STREAM EPITAXY AND THE ROLE OF THE BOUNDARY-LAYER IN CHEMICAL VAPOR-DEPOSITION

被引:5
作者
KATSUYAMA, T
BEDAIR, SM
机构
关键词
D O I
10.1063/1.341155
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:5098 / 5103
页数:6
相关论文
共 21 条
[1]   GA1-XINXAS INP ABRUPT HETEROSTRUCTURES GROWN BY MOVPE AT ATMOSPHERIC-PRESSURE [J].
ANDRE, JP ;
MENU, EP ;
ERMAN, M ;
MEYNADIER, MH ;
NGO, T .
JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (02) :71-74
[2]  
ELJANI V, 1982, J PHYS PARIS, P303
[3]  
FRAAS LM, 1982, J APPL PHYS, V52, P6939
[4]   MOLECULAR STREAM EPITAXY OF ULTRATHIN INGAAS/GAASP SUPERLATTICES [J].
KATSUYAMA, T ;
TISCHLER, MA ;
KARAM, NH ;
ELMASRY, N ;
BEDAIR, SM .
APPLIED PHYSICS LETTERS, 1987, 51 (07) :529-531
[5]  
KATSUYAMA T, 1986, ELECTRONIC MATERIAL, P20
[6]  
LEWIS CR, 1983, J ELECTRON MATER, V13, P749
[7]   A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY [J].
LEYS, MR ;
VEENVLIET, H .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :145-153
[8]   NEW GAAS, GAP, AND GAASX P1-X VACUUM DEPOSITION TECHNIQUE USING ARSINE AND PHOSPHINE GAS [J].
MORRIS, FJ ;
FUKUI, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (02) :506-510
[9]   ON THE REACTION-MECHANISM OF GAAS MOCVD [J].
NISHIZAWA, J ;
KURABAYASHI, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) :413-417
[10]   RECENT ADVANCES IN MOCVD GROWTH OF INXGA1-XASYP1-Y ALLOYS [J].
RAZEGHI, M ;
DUCHEMIN, JP .
JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :145-149