共 21 条
- [2] ELJANI V, 1982, J PHYS PARIS, P303
- [3] FRAAS LM, 1982, J APPL PHYS, V52, P6939
- [5] KATSUYAMA T, 1986, ELECTRONIC MATERIAL, P20
- [6] LEWIS CR, 1983, J ELECTRON MATER, V13, P749
- [8] NEW GAAS, GAP, AND GAASX P1-X VACUUM DEPOSITION TECHNIQUE USING ARSINE AND PHOSPHINE GAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (02): : 506 - 510
- [9] ON THE REACTION-MECHANISM OF GAAS MOCVD [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) : 413 - 417