INGAAS-BASED RESONANT-TUNNELING BARRIER STRUCTURES GROWN BY MBE

被引：16

作者：

MUTO, S

INATA, T

机构：

[1] Fujitsu Labs. Ltd., Atsugi

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 06期

关键词：

D O I：

10.1088/0268-1242/9/6/001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The negative differential resistance properties of resonant tunnelling barrier diodes with InGaAs quantum wells developed by us for new transistor applications are reviewed. The emphasis is on the peak current density and the peak-to-valley ratio. The tunnel barriers of InAlAs, pseudomorphic AlAs, AlAsSb and GaAsSb are studied. A simple theoretical calculation which includes the mid-gap band non-parabolicity of tunnelling electrons is described. These theoretical calculations show excellent agreement with the observed peak current density at 77 K and 300 K and a reasonable agreement with the valley current density at 300 K.

引用

页码：1157 / 1170

页数：14

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