OPTIMIZATION OF CONTACTS AND MOBILITIES FOR (001) ORIENTED 2-DIMENSIONAL HOLE GASES

被引：8

作者：

CHENG, TS ^{[1
]}

JOHNSTON, D ^{[1
]}

MIDDLETON, J ^{[1
]}

STRICKLAND, K ^{[1
]}

HUGHES, OH ^{[1
]}

HARRIS, JJ ^{[1
]}

FOXON, CT ^{[1
]}

MELLOR, CJ ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,BLACKETT LAB,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 04期

关键词：

D O I：

10.1116/1.587220

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A series of conventional and novel (AlGa)As/GaAs two-dimensional hole gas (2DHG) structures have been grown on (001) oriented surfaces. The samples were grown following an identical growth regime so as to render them comparable. The effects of variation in spacer layer width, growth interruption at the (AlGa)As/GaAs interface, variation in continuous and delta-doped beryllium density and of the subsequent contacting procedures, together with the use of As2 instead of As4 during growth, have been studied. The results are compared with theoretical analysis and an improved procedure for producing and contacting high mobility 2DHGs is described.

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页码：2621 / 2624

页数：4

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