POLARIZATION-DEPENDENT PHOTOCURRENT IN p-GaAs

被引：0
作者：
Rasulov, V. R. [1 ]
机构：
[1] Ferghana State Univ, Chair Phys, 19 Murabbiylar Str, Ferghana 150100, Uzbekistan
来源：
UKRAINIAN JOURNAL OF PHYSICS | 2016年 / 61卷 / 11期
关键词：
photovoltaic effect; semiconductor; polarization; photocurrent; Hamiltonian; momentum operator; energy spectrum; light absorption coefficient;
D O I：
10.15407/ujpe61.11.0987
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
An expression for the spectral and temperature dependences of a photocurrent arising as a result of the linear photovoltaic effect in such semiconductors as gallium arsenide with the hole conduction has been derived. The photocurrent is shown to arise owing to the presence of terms with different parities in the effective hole Hamiltonian. Theoretical and experimental results have been compared.
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页码：987 / 991
页数：5
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