THERMOELECTRIC-POWER OF A DISORDERED METAL NEAR THE METAL-INSULATOR-TRANSITION

被引：45

作者：

LAKNER, M

VONLOHNEYSEN, H

机构：

[1] Physikalisches Institut, Universität Karlsruhe

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.70.3475

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The thermoelectric power S of uncompensated Si:P with P concentration N near the metal-insulator transition occurring at N(c) has been measured at very low temperatures (0.04 less-than-or-equal-to T less-than-or-equal-to 3 K). For N >> N(c), S is negative and shows the linear T dependence of a metal, whereas close to N(c) an anomalous behavior with a sign change of S at low T is observed. The strong dependence of S on magnetic fields up to 6 T relates the anomaly to magnetic scattering, thus giving the first experimental evidence for localized moments near the metal-insulator transition in a transport property,

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页码：3475 / 3478

页数：4

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