LPE GA1-XINXSB MULTIGRADING LAYERS WITH CUTOFF WAVELENGTH UP TO 4.71 MU-M (X=0.75)

被引：0
|
作者：
GONG, XY
OKITSU, K
HAYAKAWA, Y
YAMAGUCHI, T
KUMAGAWA, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 04期
关键词：
GAINSB; MULTIGRADING LAYERS; COMPOSITION; WAVELENGTH; TRANSMISSION;
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The dependence of the energy band-gap on In atomic fraction for the liquid phase epitaxy (LPE) GaInSb/GaSb multigrading layers has been investigated by infrared transmission measurements combined with electroprobe microanalysis (EPMA). The result showed that epilayers with cut-off wavelength up to 4.71-mu-m at room temperature and with In atomic fraction as high as 0.75 have been obtained for the first time.
引用
收藏
页码：1016 / 1017
页数：2
相关论文
共 13 条
  • [1] LPE GROWTH OF GA1-XINXSB MULTIGRADING LAYERS
    GONG, XY
    OKITSU, K
    OZAWA, T
    HAWAKAWA, Y
    YAMAGUCHI, T
    KUMAGAWA, M
    CRYSTAL RESEARCH AND TECHNOLOGY, 1992, 27 (05) : 609 - 616
  • [2] DEMONSTRATION OF 3.5 MU-M GA1-XINXSB/INAS SUPERLATTICE DIODE-LASER
    HASENBERG, TC
    CHOW, DH
    KOST, AR
    MILES, RH
    WEST, L
    ELECTRONICS LETTERS, 1995, 31 (04) : 275 - 276
  • [3] 64X64 FPA WITH CUTOFF WAVELENGTH OF 10.6-MU-M USING LPE-GROWN HGCDTE
    AWAMOTO, K
    KAJIHARA, N
    SUDO, G
    FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1994, 30 (02): : 129 - 136
  • [4] PHOTOLUMINESCENCE OF LPE-GROWN INAS1-X-YSBXPY FOR 2.55 MU-M LASERS
    KRIER, A
    ROWE, DR
    MATERIALS LETTERS, 1992, 13 (4-5) : 225 - 231
  • [5] Systematic study of type II Ga1-xInxSb/InAs superlattices for infra-red detection in the 10-12 μm wavelength range
    Corbin, E
    Shaw, MJ
    Kitchin, MR
    Hagon, JP
    Jaros, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (04) : 263 - 272
  • [6] GAAS/ALXGA1-XAS QUANTUM-WELL INFRARED PHOTODETECTORS WITH CUTOFF WAVELENGTH LAMBDA-C = 14.9 MU-M
    ZUSSMAN, A
    LEVINE, BF
    HONG, M
    MANNAERTS, JP
    ELECTRONICS LETTERS, 1991, 27 (17) : 1512 - 1513
  • [7] LONG-WAVELENGTH (1.0-1.6 MU-M) IN0.53[GAXAL1-X]0.47 AS IN0.53GA0.47AS MSM PHOTODIODE
    GRIEM, HT
    RAY, S
    FREEMAN, JL
    WEST, DL
    SCHAFF, WJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) : 2625 - 2625
  • [8] ELECTROLUMINESCENCE OUT TO 2.1 MU-M OBSERVED IN GASB/IN(X)GA(1-X)SB QUANTUM-WELLS GROWN BY MOVPE
    KRIER, A
    BISSITT, SA
    MASON, NJ
    NICHOLAS, RJ
    SALESSE, A
    WALKER, PJ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (01) : 87 - 90
  • [9] 1X16 PHOTONIC SWITCH OPERATING AT 1.55 MU-M WAVELENGTH BASED ON OPTICAL AMPLIFIERS AND A PASSIVE OPTICAL SPLITTER
    KOREN, U
    YOUNG, MG
    MILLER, BI
    NEWKIRK, MA
    CHIEN, M
    ZIRNGIBL, M
    DRAGONE, C
    GLANCE, B
    KOCH, TL
    TELL, B
    BROWNGOEBELER, K
    RAYBON, G
    APPLIED PHYSICS LETTERS, 1992, 61 (14) : 1613 - 1615
  • [10] SPECTROSCOPIC ELLIPSOMETRY DETERMINATION OF THE REFRACTIVE-INDEX OF STRAINED SI1-XGEX LAYERS IN THE NEAR-INFRARED WAVELENGTH RANGE (0.9-1.7 MU-M)
    DESANDE, JCG
    RODRIGUEZ, A
    RODRIGUEZ, T
    APPLIED PHYSICS LETTERS, 1995, 67 (23) : 3402 - 3404
12