Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate

被引：46

作者：

Miyamoto, Yu ^{[1
]}

Handa, Hiroyuki ^{[1
]}

Saito, Eiji ^{[1
]}

Konno, Atsushi ^{[1
]}

Narita, Yuzuru ^{[2
]}

Suemitsu, Maki ^{[1
,3
]}

Fukidome, Hirokazu ^{[4
]}

Ito, Takashi ^{[4
]}

Yasui, Kanji ^{[5
]}

Nakazawa, Hideki ^{[6
]}

Endoh, Tetsuo ^{[4
]}

机构：

[1] Tohoku Univ, Res Inst Elect Commun, Sendai, Miyagi 9808577, Japan

[2] Yamagata Univ, Dept Elect Engn, Yonezawa, Yamagata 9928510, Japan

[3] Japan Sci & Technol Agcy, CREST, Tokyo 1070075, Japan

[4] Tohoku Univ, Ctr Interdisciplinary Res, Aoba Ku, Sendai, Miyagi 9808578, Japan

[5] Nagaoka Univ Technol, Dept Elect Engn, Nagaoka, Niigata 9402188, Japan

[6] Hirosaki Univ, Dept Mat Sci & Technol, Hirosaki, Aomori 0368561, Japan

来源：

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY | 2009年 / 7卷

关键词：

Silicon carbide; Heteroepitaxy; Organosilane; Gas-source MBE; Graphene;

D O I：

10.1380/ejssnt.2009.107

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

By conducting a 1200 degrees C vacuum annealing of a 3C-SiC(111) ultrathin film preformed on a Si(110) surface, we have succeeded in forming a graphene layer on a Si substrate. Raman-scattering spectrum from this surface presents a distinct 2D band, whose deconvolution into four subcomponents indicates that the film mostly consists of a two-layer graphene. The peak position is blue-shifted from that of a free-standing graphene formed by a mechanical exfoliation method, suggesting a compressive stress in the film.

引用

页码：107 / 109

页数：3

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