HIGH QUANTUM EFFICIENCY INGAAS/GAAS QUANTUM WIRES DEFINED BY SELECTIVE WET ETCHING

被引：8

作者：

GREUS, C

FORCHEL, A

STRAKA, J

PIEGER, K

EMMERLING, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 06期

关键词：

D O I：

10.1116/1.585618

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A technology is reported for the fabrication of buried InGaAs/GaAs quantum wires. For the pattern transfer of the nanometer structures a sensitive high resolution negative e-beam resist is used as a direct etch mask. The essential step of the approach is a selective wet etch process by which only the top barrier layer of a quantum well structure is removed between masked regions. Due to the high energy barrier of the etched surface quantum wells compared to the masked regions a lateral potential well is formed. Investigating the width dependence of the photoluminescence efficiency a high intensity is found, even for narrow wires and a significant shift of the emission to high energies for the smallest wires with widths of 35 nm.

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页码：2882 / 2885

页数：4

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