SOLVENT MICROINCLUSIONS IN GAAS EPITAXIAL LAYERS

被引：8
|
作者：
VASILENKO, ND
GLUSHKOV, EA
MARONCHUK, IE
MARONCHUK, EE
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1981年 / 52卷 / APR期
关键词：
D O I：
10.1016/0022-0248(81)90218-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：354 / 358
页数：5
相关论文
共 50 条
  • [41] EPITAXIAL LAYERS OF CUINTE2 ON GAAS
    NEUMANN, H
    NOWAK, E
    SCHUMANN, B
    TEMPEL, A
    KUHN, G
    KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1980, 15 (01): : 61 - 69
  • [42] MORPHOLOGY OF GAAS EPITAXIAL LAYERS GROWN BY MOCVD
    MORI, H
    TAKAGISHI, S
    JOURNAL OF CRYSTAL GROWTH, 1984, 69 (01) : 23 - 28
  • [43] FORMATION OF GALLIUM MICROINCLUSIONS IN GAAS MONOCRYSTALS
    VASILENKO, ND
    GORBATYUK, AY
    MARONCHUK, IY
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1988, 31 (02): : 32 - 35
  • [44] INFLUENCE OF THE MICROINCLUSIONS OF LOW-MELTING-POINT METALS ON THE RESIDUAL MECHANICAL STRAINS IN THE EPITAXIAL STRUCTURES OF GAAS
    VASILENKO, ND
    GORBATIUK, AY
    UKRAINSKII FIZICHESKII ZHURNAL, 1993, 38 (10): : 1583 - 1588
  • [45] Distribution of ytterbium in GaAs⟨Yb⟩ and GaAs⟨Yb,Ge⟩ epitaxial layers
    Arbenina, VV
    Yakimova, EE
    INORGANIC MATERIALS, 1998, 34 (01) : 3 - 6
  • [46] Distribution of Ytterbium in GaAs(Yb) and GaAs(Yb,Ge) Epitaxial Layers
    Inorganic Materials, 1998, 34 (01)
  • [47] THE SCREW AND CIRCULAR STRUCTURES OF SI AND GAAS EPITAXIAL LAYERS
    NISHIZAWA, J
    TADANO, H
    OYAMA, Y
    SHIMBO, M
    JOURNAL OF CRYSTAL GROWTH, 1981, 55 (02) : 402 - 405
  • [48] EPITAXIAL REGROWTH OF THIN AMORPHOUS GAAS-LAYERS
    GRIMALDI, MG
    PAINE, BM
    MAENPAA, M
    NICOLET, MA
    SADANA, DK
    APPLIED PHYSICS LETTERS, 1981, 39 (01) : 70 - 72
  • [49] Epitaxial growth of GaAs thin layers on NiSb substrates
    S. A. Aitkhozhin
    A. S. Artemov
    P. S. Belousov
    M. A. Bobylev
    E. V. Kaevitser
    V. E. Lyubchenko
    K. P. Petrov
    Yu. Sh. Temirov
    S. B. Farafonov
    Inorganic Materials, 2015, 51 : 83 - 87
  • [50] MOLECULAR-BEAM EPITAXIAL GAAS LAYERS FOR MESFETS
    WOOD, CEC
    APPLIED PHYSICS LETTERS, 1976, 29 (11) : 746 - 748
12345