PROCESS-INDUCED EFFECTS ON CARRIER LIFETIME AND DEFECTS IN FLOAT ZONE SILICON

被引：13
|
作者：
ROHATGI, A
RAICHOUDHURY, P
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 05期
关键词：
D O I：
10.1149/1.2129833
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1136 / 1139
页数：4
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