PHOTO-IONIZATION OF DEEP IMPURITY LEVELS IN SEMICONDUCTORS

被引：15
作者：
BLOW, KJ
INKSON, JC
机构：
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1980年 / 13卷 / 03期
关键词：
D O I：
10.1088/0022-3719/13/3/011
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：359 / 368
页数：10
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