PHOTO-IONIZATION OF DEEP IMPURITY LEVELS IN SEMICONDUCTORS

被引：15
|
作者：
BLOW, KJ
INKSON, JC
机构：
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1980年 / 13卷 / 03期
关键词：
D O I：
10.1088/0022-3719/13/3/011
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：359 / 368
页数：10
相关论文
共 50 条
  • [21] DETAILED CHARACTERIZATION OF DEEP CENTERS IN CDTE - PHOTO-IONIZATION AND THERMAL IONIZATION PROPERTIES
    TAKEBE, T
    SARAIE, J
    MATSUNAMI, H
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 457 - 469
  • [22] ZERO-PHONON PHOTO-IONIZATION OF DEEP CENTERS IN GAAS
    KRAVCHENKO, AF
    BOBYLEV, BA
    TORCHINOV, KMZ
    ZALETIN, VM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (03): : 300 - 302
  • [23] IMPACT IONIZATION OF DEEP LEVELS IN SEMICONDUCTORS
    KUZMIN, VA
    KRYUKOVA, NN
    KYUREGYAN, AS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (09): : 1136 - 1138
  • [24] THE SPECTRA OF OPTICAL-ABSORPTION AND PHOTO-IONIZATION OF THE SHALLOW ACCEPTOR IMPURITIES IN SEMICONDUCTORS
    KOGAN, SM
    POLUPANOV, AF
    ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1981, 80 (01): : 394 - 412
  • [25] FIELD-IONIZATION OF LOCALIZED IMPURITY LEVELS IN SEMICONDUCTORS
    BANAVAR, JR
    COON, DD
    DERKITS, G
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 275 - 275
  • [26] MULTIPHOTON IONIZATION OF SEMICONDUCTORS WHEN IMPURITY LEVELS ARE AVAILABLE
    LEBEDEV, IV
    OPTIKA I SPEKTROSKOPIYA, 1972, 33 (06): : 1190 - 1191
  • [27] CHARACTERIZATION OF RESONANCES IN PHOTO-IONIZATION
    THIEL, W
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1983, 31 (02) : 151 - 160
  • [28] PHOTO-IONIZATION OF ETHYLENE CLUSTERS
    CEYER, ST
    TIEDEMANN, PW
    NG, CY
    MAHAN, BH
    LEE, YT
    JOURNAL OF CHEMICAL PHYSICS, 1979, 70 (05) : 2138 - 2144
  • [29] PHOTO-IONIZATION OF ALKALI MOLECULES
    PETERSON, KI
    DAO, PD
    CASTLEMAN, AW
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1982, 183 (MAR): : 173 - PHYS
  • [30] Entanglement in photo-ionization process
    Ivanov, I. A.
    Kim, Kyung Taec
    SCIENTIFIC REPORTS, 2024, 14 (01):
12345