PHOTO-IONIZATION OF DEEP IMPURITY LEVELS IN SEMICONDUCTORS

被引：15

作者：

BLOW, KJ

INKSON, JC

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1980年 / 13卷 / 03期

关键词：

D O I：

10.1088/0022-3719/13/3/011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：359 / 368

页数：10

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