LOW-TEMPERATURE PHOTO-LUMINESCENCE OF LIGHTLY SI-DOPED AND UNDOPED MBE GAAS

被引：112

作者：

BRIONES, F ^{[1
]}

COLLINS, DM ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,HEWLETT PACKARD LABS,SOLID STATE LAB,PALO ALTO,CA 94304

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1982年 / 11卷 / 04期

关键词：

D O I：

10.1007/BF02672399

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：847 / 866

页数：20

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