LOW-TEMPERATURE PHOTO-LUMINESCENCE OF LIGHTLY SI-DOPED AND UNDOPED MBE GAAS

被引：112

作者：

BRIONES, F ^{[1
]}

COLLINS, DM ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,HEWLETT PACKARD LABS,SOLID STATE LAB,PALO ALTO,CA 94304

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1982年 / 11卷 / 04期

关键词：

D O I：

10.1007/BF02672399

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：847 / 866

页数：20

共 16 条

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[3] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS
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[4] EFFECT OF ACCELERATED-GROWTH RATE (1-5 MU-M-H) ON MOLECULAR-BEAM EPITAXIAL GAAS USING SI AS A DOPANT
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[8] ELECTRON-IRRADIATION EFFECT ON EMISSION BAND ASSOCIATED WITH CARBON ACCEPTORS IN N-GAAS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) : 795 - 796
[9] OPTICAL AND ELECTRICAL CHARACTERIZATION OF CHEMICAL DEFECTS IN GAAS-LAYERS GROWN BY MBE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) : 1336 - 1339
[10] KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927

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