ATOMIC LAYER EPITAXY GROWTH OF DOPED ZINC-OXIDE THIN-FILMS FROM ORGANOMETALS

被引：177
作者：
LUJALA, V
SKARP, J
TAMMENMAA, M
SUNTOLA, T
机构：
[1] Microchemistry Ltd., FIN-02151 Espoo
来源：
APPLIED SURFACE SCIENCE | 1994年 / 82-3卷
关键词：
D O I：
10.1016/0169-4332(94)90192-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
An atomic layer epitaxy process for growing Al-doped ZnO thin films is presented. Organometallic precursors of zinc and aluminum were used to react with water at substrate temperatures of 120-350-degrees-C. Growth rate varied from 0.5 to 2.5 angstrom/cycle, depending on precursors and substrate temperatures used. With optimum doping, sheet resistances of 10 OMEGA/DELTA with 1 mum thick films were obtained.
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页码：34 / 40
页数：7
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