C-V MEASUREMENTS ON MIS STRUCTURES ON N-INSB FORMED BY ROOM-TEMPERATURE REACTIVE DEPOSITION OF SI3N4

被引：6

作者：

OLCAYTUG, F

RIEDLING, K

FALLMANN, W

机构：

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 17期

关键词：

D O I：

10.1049/el:19800480

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：677 / 678

页数：2

共 9 条

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[9] PREPARATION AND PROPERTIES OF THIN FILM SILICON-NITROGEN COMPOUNDS PRODUCED BY A RADIO FREQUENCY GLOW DISCHARGE REACTION [J].

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