CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS SCHOTTKY BARRIERS

被引：19

作者：

SINGH, J ^{[1
]}

COHEN, MH ^{[1
]}

机构：

[1] UNIV CHICAGO,DEPT PHYS,CHICAGO,IL 60637

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 01期

关键词：

D O I：

10.1063/1.327389

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：413 / 418

页数：6

共 12 条

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[8] INVESTIGATION OF AMORPHOUS-SILICON BARRIER AND P-N-JUNCTION [J].

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