PREPARATION, SINGLE-CRYSTAL GROWTH, AND CHARACTERIZATION OF PTSI AND PTGE

被引：4

作者：

BAUGHMAN, RJ

QUINN, RK

机构：

来源：

关键词：

D O I：

10.1016/0025-5408(72)90155-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1035 / +

页数：1

共 16 条

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