THERMAL CONDUCTIVITY AND THERMOELECTRIC POWER OF HEAVILY DOPED N-TYPE SILICON

被引：39

作者：

BRINSON, ME

DUNSTAN, W

机构：

来源：

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS | 1970年 / 3卷 / 03期

关键词：

D O I：

10.1088/0022-3719/3/3/001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：483 / &

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