EPITAXIAL-GROWTH RATE MEASUREMENTS DURING MOLECULAR-BEAM EPITAXY

被引：57

作者：

SPRINGTHORPE, AJ

MAJEED, A

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.584824

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：266 / 270

页数：5

共 10 条

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[10] IMPROVED GAAS SUBSTRATE-TEMPERATURE MEASUREMENT DURING MOLECULAR-BEAM EPITAXIAL-GROWTH [J].

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