N-TYPE DOPING OF INDIUM-PHOSPHIDE BY IMPLANTATION

被引：47
作者：
DAVIES, DE
LORENZO, JP
RYAN, TG
机构：
来源：
SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 07期
关键词：
D O I：
10.1016/0038-1101(78)90298-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：981 / 985
页数：5
相关论文
共 19 条
[1]  
ANTYPAS G, 1972, S GAAS, P48
[2]   INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH [J].
ASTLES, MG ;
SMITH, FGH ;
WILLIAMS, EW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) :1750-1757
[3]   INCORPORATION OF SI IN LIQUID-PHASE EPITAXIAL INP LAYERS [J].
BAUMANN, GG ;
BENZ, KW ;
PILKUHN, MH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) :1232-1235
[4]   LOW-RESISTIVITY N-TYPE LAYERS IN INASXP1-X BY ION-IMPLANTATION [J].
DAVIES, DE ;
KENNEDY, JK ;
LOWE, LF .
ELECTRONICS LETTERS, 1975, 11 (19) :462-463
[5]   ROLE OF ELEVATED-TEMPERATURES IN IMPLANTATION OF GAAS [J].
DAVIES, DE ;
ROOSILD, S ;
LOWE, L .
SOLID-STATE ELECTRONICS, 1975, 18 (09) :733-736
[6]   COMPENSATION FROM IMPLANTATION DAMAGE IN INP [J].
DAVIES, DE ;
LORENZO, JP ;
DEANE, ML .
APPLIED PHYSICS LETTERS, 1977, 31 (04) :256-258
[7]   COMPENSATION FROM IMPLANTATION IN GAAS [J].
DAVIES, DE ;
KENNEDY, JK ;
YANG, AC .
APPLIED PHYSICS LETTERS, 1973, 23 (11) :615-616
[8]  
DAVIES DT, UNPUBLISHED
[9]  
DONNELLY JP, 1976, SEP P INT S GALL ARS, P166
[10]  
EISEN F, 1974, 4TH P INT C ION IMPL
12