HIGH-EFFICIENCY ALGAAS/SI MONOLITHIC TANDEM SOLAR-CELL GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：64
作者：
SOGA, T
KATO, T
YANG, M
UMENO, M
JIMBO, T
机构：
[1] NAGOYA INST TECHNOL,DEPT ELECT & COMP ENGN,SHOWA KU,NAGOYA,AICHI 466,JAPAN
[2] NAGOYA INST TECHNOL,MICROSTRUCT DEVICES RES CTR,SHOWA KU,NAGOYA,AICHI 466,JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 06期
关键词：
D O I：
10.1063/1.359880
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The improvements of the AlGaAs solar cell grown on the Si substrate and the AlGaAs/Si tandem solar cell by metalorganic chemical vapor deposition have been investigated. The active-area conversion efficiency of the Al0.1Ga0.9As solar cell on the Si substrate as high as 12.9% has been obtained by improving the growth sequence and adopting an Al compositionally graded band emitter layer. A high efficiency monolithic AlGaAs/Si tandem solar cell with the active-area conversion efficiency of 19.9% and 20.6% (AMO and 1 sun at 27 degrees C) under two-terminal and four-terminal configurations, respectively, is demonstrated. (C) 1995 American Institute of Physics.
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页码：4196 / 4199
页数：4
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