VAPOR-PHASE DEPOSITION OF BETA-SILICON CARBIDE ON SILICON SUBSTRATES

被引：30

作者：

KUROIWA, K ^{[1
]}

SUGANO, T ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,DEPT ELECTR ENGN,BUNKYO,TOKYO 113,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 01期

关键词：

D O I：

10.1149/1.2403387

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：138 / 140

页数：3

共 13 条

[1]

Bartlett R. W., 1969, MATER RES B, V4, pS341

[2] EPITAXIAL GROWTH OF SILICON CARBIDE BY THERMAL REDUCTION TECHNIQUE [J].

CAMPBELL, RB ;

CHU, TL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) :825-&

[3]

JACKSON DM, 1965, T METALL SOC AIME, V233, P468

[4] EPITAXIAL GROWTH OF SILICON CARBIDE [J].

JENNINGS, VJ ;

SOMMER, A ;

CHANG, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) :728-&

[5] GROWTH OF SINGLE-CRYSTAL FILMS OF CUBIC SILICON CARBIDE ON SILICON [J].

KHAN, IH ;

SUMMERGRAD, RN .

APPLIED PHYSICS LETTERS, 1967, 11 (01) :12-+

[6]

KNIPPENBERG WF, 1966, PHILIPS RES REP, V21, P113

[7]

Knippenberg WF., 1963, PHILIPS RES REP, V18, P161

[8]

MARSHALL RC, 1969, MAT RES B, V4, pS73

[9] EPITAXIAL GROWTH OF SIC FILM ON SILICON SUBSTRATE AND ITS CRYSTAL STRUCTURE [J].

NAKASHIMA, H ;

SUGANO, T ;

YANAI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (10) :874-+

[10] GROWTH AND PROPERTIES OF BETA-SIC SINGLE CRYSTALS [J].

NELSON, WE ;

HALDEN, FA ;

ROSENGREEN, A .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :333-+

← 1 2 →