PARAMETRIC INVESTIGATION OF SI1-XGEX/SI MULTIPLE-QUANTUM-WELL GROWTH

被引：10

作者：

THOMPSON, PE ^{[1
]}

GODBEY, D ^{[1
]}

HOBART, K ^{[1
]}

GLASER, E ^{[1
]}

KENNEDY, T ^{[1
]}

TWIGG, M ^{[1
]}

SIMONS, D ^{[1
]}

机构：

[1] NATL INST STAND & TECHNOL,GAITHERSBURG,MD 20899

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 4B期

关键词：

SI1-XGEX/SI MULTIPLE QUANTUM WELLS; PHOTOLUMINESCENCE; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY;

D O I：

10.1143/JJAP.33.2317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si0.8Ge0.2/Si multiple quantum wells (3 nm/30 nm) have been grown by molecular beam epitaxy and have been characterized using photoluminescence (PL), secondary ion mass spectrometry, and transmission electron microscopy. A parametric investigation relating the growth conditions to the PL was carried out. The existence of phonon-resolved band-edge PL appears to be strongly related to the background impurity concentration. The connection between phonon-resolved band-edge PL and higher substrate growth temperatures is probably due to the temperature- dependent incorporation of impurities. In the as-grown samples a correlation of the broad PL with platelet density in the quantum wells was observed. The broad PL may be associated with Cr at the platelets since a high temperature (710-degrees-C) anneal extinguished the broad PL and caused a reduction in the Cr found in the quantum wells, but had no effect on the platelet density.

引用

页码：2317 / 2321

页数：5

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