PARAMETRIC INVESTIGATION OF SI1-XGEX/SI MULTIPLE-QUANTUM-WELL GROWTH

被引：10
|
作者：
THOMPSON, PE [1 ]
GODBEY, D [1 ]
HOBART, K [1 ]
GLASER, E [1 ]
KENNEDY, T [1 ]
TWIGG, M [1 ]
SIMONS, D [1 ]
机构：
[1] NATL INST STAND & TECHNOL,GAITHERSBURG,MD 20899
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 4B期
关键词：
SI1-XGEX/SI MULTIPLE QUANTUM WELLS; PHOTOLUMINESCENCE; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY;
D O I：
10.1143/JJAP.33.2317
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Si0.8Ge0.2/Si multiple quantum wells (3 nm/30 nm) have been grown by molecular beam epitaxy and have been characterized using photoluminescence (PL), secondary ion mass spectrometry, and transmission electron microscopy. A parametric investigation relating the growth conditions to the PL was carried out. The existence of phonon-resolved band-edge PL appears to be strongly related to the background impurity concentration. The connection between phonon-resolved band-edge PL and higher substrate growth temperatures is probably due to the temperature- dependent incorporation of impurities. In the as-grown samples a correlation of the broad PL with platelet density in the quantum wells was observed. The broad PL may be associated with Cr at the platelets since a high temperature (710-degrees-C) anneal extinguished the broad PL and caused a reduction in the Cr found in the quantum wells, but had no effect on the platelet density.
引用
收藏
页码：2317 / 2321
页数：5
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