DEUTERON BOMBARDMENT OF GALLIUM-ARSENIDE FOR DEVICE ISOLATION

被引：17
作者：
STEEPLES, K
SAUNDERS, IJ
SMITH, JG
机构：
来源：
ELECTRON DEVICE LETTERS | 1980年 / 1卷 / 05期
关键词：
D O I：
10.1109/EDL.1980.25235
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：72 / 74
页数：3
相关论文
共 50 条
[21]   GALLIUM-ARSENIDE TRANSISTORS [J].
FRENSLEY, WR .
SCIENTIFIC AMERICAN, 1987, 257 (02) :80-+
[22]   GALLIUM-ARSENIDE ON SILICON [J].
SHICHIJO, H .
ELECTRONICS & WIRELESS WORLD, 1988, 94 (1628) :609-609
[23]   GALLIUM-ARSENIDE CHIPS IN [J].
MARTIN, D .
CHEMISTRY IN BRITAIN, 1992, 28 (03) :211-212
[24]   A STUDY OF GALLIUM-ARSENIDE AND ALUMINUM GALLIUM-ARSENIDE REACTIVE ION ETCHING PARAMETERS [J].
SCHERER, A ;
BEEBE, E ;
CRAIGHEAD, HG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1604-1605
[25]   INVESTIGATION OF ALUMINUM GALLIUM-ARSENIDE GALLIUM-ARSENIDE SUPERLATTICES BY ATOMIC FORCE MICROSCOPY [J].
FRIEDBACHER, G ;
HANSMA, PK ;
SCHWARZBACH, D ;
GRASSERBAUER, M ;
NICKEL, H .
ANALYTICAL CHEMISTRY, 1992, 64 (17) :1760-1762
[26]   DEUTERON ACTIVATION-ANALYSIS OF CARBON IN GALLIUM-ARSENIDE USING SUBSTOICHIOMETRIC PRECIPITATION [J].
SHIKANO, K ;
YONEZAWA, H ;
SHIGEMATSU, T .
JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY-ARTICLES, 1987, 111 (01) :51-61
[27]   MOBILITY DEGRADATION AND TRANSFERRED ELECTRON EFFECT IN GALLIUM-ARSENIDE AND INDIUM GALLIUM-ARSENIDE [J].
ARORA, VK ;
MUI, DSL ;
MORKOC, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (06) :1231-1238
[28]   COULOMETRIC TITRATION OF GALLIUM IN GALLIUM-ARSENIDE [J].
NAKAYAMA, S ;
MIZUSUNA, H ;
HARADA, S .
BUNSEKI KAGAKU, 1990, 39 (05) :307-311
[29]   ION-BEAM INDUCED ISOLATION OF GALLIUM-ARSENIDE LAYERS [J].
SENGUPTA, D ;
ZEMANSKI, JM ;
WILLIAMS, JS ;
JOHNSON, ST ;
POGANY, AP .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 42 (03) :328-333
[30]   PHOTOLUMINESCENCE INVESTIGATION OF DISTRIBUTION OF DEFECTS IN GALLIUM-ARSENIDE AFTER ION-BOMBARDMENT [J].
GAVRILOV, AA ;
KACHURIN, GA ;
SAFRONOV, LN ;
SMIRNOV, LS .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (08) :847-848
12345