THERMAL NOISE IN HOT ELECTRON REGIME IN FETS

被引：8
作者：
VANDERZIEL, A
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1971年 / ED18卷 / 10期
关键词：
D O I：
10.1109/T-ED.1971.17315
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：977 / +
页数：1
相关论文
共 6 条
[1]   HOT ELECTRON EFFECTS IN SINGLE-INJECTION SILICON SCL DIODES [J].
BOUGALIS, DN ;
VANDERZI.A .
SOLID-STATE ELECTRONICS, 1971, 14 (04) :265-&
[2]   NOISE TEMPERATURE OF HOT ELECTRONS IN GERMANIUM [J].
ERLBACH, E ;
GUNN, JB .
PHYSICAL REVIEW LETTERS, 1962, 8 (07) :280-&
[3]   COMMENTS ON HOT CARRIER NOISE IN FIELD-EFFECT TRANSISTORS [J].
KLAASSEN, FM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (01) :74-&
[4]   INFLUENCE OF HOT CARRIER EFFECTS ON THERMAL NOISE OF FIELD-EFFECT TRANSISTORS [J].
KLAASSEN, FM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (10) :858-&
[5]   NOISE RESISTANCE OF FETS IN HOT ELECTRON REGIME [J].
VANDERZIEL, A .
SOLID-STATE ELECTRONICS, 1971, 14 (04) :347-+
[6]  
VANDERZIEL A, 1970, NOISE SOURCES CHARAC, pCH5
1