STRAIN CHARACTERIZATION IN SI/SIGE SUPERLATTICES BY CONVERGENT BEAM ELECTRON-DIFFRACTION

被引：0
作者：
TOUAITIA, R
CHERNS, D
ROSSOUW, CJ
HOUGHTON, DC
机构：
[1] UNIV BRISTOL,HH WILLS PHYS LAB,BRISTOL BS8 1TL,AVON,ENGLAND
[2] NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1991年 / 117期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A method is described whereby strain in Si1-xGex/Si(001) superlattices can be derived using convergent beam electron diffraction (CBED) and large angle CBED. The method uses plan-view samples, thus avoiding strain relaxation in cross-sectional samples. Rocking curves for reflections from planes inclined to the interface were asymmetric and showed superlattice peaks whose intensities were sensitive to strain. A quantitative analysis of the experimental results using kinematical and dynamical simulations showed good agreement for the expected strains to within an accuracy of +/- 20%.
引用
收藏
页码：635 / 640
页数：6
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