FORMATION OF SURFACE STATES DURING STRESS AGING OF THERMAL SI-SIO2 INTERFACES

被引:88
作者
GOETZBER.A [1 ]
LOPEZ, AD [1 ]
STRAIN, RJ [1 ]
机构
[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
关键词
D O I
10.1149/1.2403408
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:90 / 96
页数:7
相关论文
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