HIGH-POWER, VERY LOW THRESHOLD, GAINP/ALGAINP VISIBLE DIODE-LASERS

被引：38

作者：

SERREZE, HB

CHEN, YC

WATERS, RG

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 22期

关键词：

D O I：

10.1063/1.104845

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Visible light (665 nm) laser diodes employing a strained-layer, single quantum well, graded index separate confinement heterostructure were fabricated from epitaxial wafers grown by metalorganic chemical vapor deposition. Threshold current densities for single element, uncoated, broad-area diodes operated cw as low as 425 A/cm2, cw power outputs of 340 mW per facet, and pulsed outputs (100-mu-s pulse width) of slightly under 1 W per facet were achieved. These power output values are believed to be the highest reported to date for visible light diode lasers, and this cw threshold current density is believed to be, by far, the lowest.

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页码：2464 / 2466

页数：3

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共 14 条

[1] ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J].

ASAI, H ;

OE, K .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2052-2056

[2] HIGH-POWER (1.4W) ALGAINP GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE VISIBLE (LAMBDA-APPROXIMATELY-658-NM) LASER [J].

BOUR, DP ;

SHEALY, JR .

APPLIED PHYSICS LETTERS, 1987, 51 (21) :1658-1660

[3] CHARACTERISTIC TEMPERATURE OF GAINP/ALGAINP SINGLE QUANTUM WELL LASERS [J].

BOUR, DP ;

CARLSON, NW ;

EVANS, GA .

ELECTRONICS LETTERS, 1989, 25 (18) :1243-1245

[4] INGAAS/ALGAAS STRAINED SINGLE QUANTUM-WELL DIODE-LASERS WITH EXTREMELY LOW THRESHOLD CURRENT-DENSITY AND HIGH-EFFICIENCY [J].

CHOI, HK ;

WANG, CA .

APPLIED PHYSICS LETTERS, 1990, 57 (04) :321-323

[5] A NEW TRANSVERSE-MODE STABILIZED INGAALP VISIBLE-LIGHT LASER DIODE USING P-P ISOTYPE HETEROBARRIER BLOCKING [J].

ITAYA, K ;

ISHIKAWA, M ;

WATANABE, Y ;

NITTA, K ;

HATAKOSHI, GI ;

UEMATSU, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12) :L2414-L2416

[6] HIGH-POWER CW OPERATION OF BROAD AREA INGAAIP VISIBLE-LIGHT LASER-DIODES [J].

ITAYA, K ;

HATAKOSHI, G ;

WATANABE, Y ;

ISHIKAWA, M ;

UEMATSU, Y .

ELECTRONICS LETTERS, 1990, 26 (03) :214-215

[7] VERY LOW THRESHOLD CURRENT ALGAINP/GAXIN1-XP STRAINED SINGLE QUANTUM-WELL VISIBLE LASER DIODE [J].

KATSUYAMA, T ;

YOSHIDA, I ;

SHINKAI, J ;

HASHIMOTO, J ;

HAYASHI, H .

ELECTRONICS LETTERS, 1990, 26 (17) :1375-1377

[8]

KISHINO K, 1990, 12TH IEEE INT SEM LA

[9] ALEXANDRITE LASER PUMPED BY SEMICONDUCTOR-LASERS [J].

SCHEPS, R ;

GATELY, BM ;

MYERS, JF ;

KRASINSKI, JS ;

HELLER, DF .

APPLIED PHYSICS LETTERS, 1990, 56 (23) :2288-2290

[10]

SCHEPS R, IN PRESS OPT LETT