III-V HETEROSTRUCTURE DEVICES FOR INTEGRATED-OPTICS

Recent progress in the development of integrated optical circuits involving the Al//xGa//1// minus //xAs/GaAs double heterostructure system is reviewed. Various devices utilizing periodic corrugations or gratings are described. Alternate attempts to fabricate optical circuits by wet chemical etching are discussed. The current trend to explore other III-V compounds is considered, with emphasis on the quaternary system Ga//xIn//1// minus //xP//yAs//1// minus //y. Lattice matching of this quaternary to InP results in long wavelength emission, suitable for use with present optical fibers. Reasons are given for increased investigation of this quaternary lattice-matched to GaAs.