ELEMENTS OF INTELLIGENT PROCESS-CONTROL FOR PLASMA DEPOSITION

被引:4
作者
WANG, HP
PERRY, EM
LILLQUIST, RD
TAYLOR, JH
机构
[1] G.E. Corporate Research and Development, Schenectady, New York
来源
JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY | 1991年 / 43卷 / 01期
关键词
D O I
10.1007/BF03220113
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Induction-coupled plasma deposition (ICPD) is currently a laboratory process relying on operator expertise rather than automated control. Intelligent process control for the ICPD process, which consists of integration of processing knowledge, process models, process sensors and control technology, offers the opportunity to provide closed-loop control as well as intelligent supervisory control to accelerate process development and bring the ICPD process to full-scale production. Intelligent process control for ICPD offers benefits such as higher material quality, control of the matrix micro-structure, cost reduction, higher process yield, and shorter development and production cycle times.
引用
收藏
页码:22 / 25
页数:4
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