QUANTUM TRANSPORT MEASUREMENTS ON SI DELTA-DOPED AND SLAB-DOPED IN0.53GA0.47AS GROWN BY MOLECULAR-BEAM EPITAXY

被引：4
作者：
MCELHINNEY, M
SKURAS, E
HOLMES, SN
JOHNSON, EA
LONG, AR
STANLEY, CR
机构：
[1] UNIV GLASGOW,DEPT PHYS & ASTRON,GLASGOW G12 8QQ,LANARK,SCOTLAND
[2] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,DEPT PHYS,LONDON SW7 2BZ,ENGLAND
来源：
JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(94)00909-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A series of high quality delta-doped In-0.53,Ga0.47As samples have been grown lattice matched to InP with design doping densities in the range 2 x 10(12) to 5 x 10(12) cm(-2). Analysis of the individual sub-band densities deduced from the Shubnikov-De Haas effect shows that both spreading and amphoteric behaviour increase with doping density.
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收藏
页码：266 / 270
页数：5
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