GROWTH OF SUPERCONDUCTING V3SI ON SI BY MOLECULAR-BEAM EPITAXIAL TECHNIQUES

[1] CROKE ET, 1988, JUN EL MAT C BOULD

[2] SURFACE-MORPHOLOGY OF EPITAXIAL CAF2 FILMS ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (05) : 519 - 521

[3] HAUENSTEIN RJ, 1987, THESIS CALTECH

[4] HUANG CF, 1988, 2ND P INT S SIL MOL, P501

[5] KINETICS OF SILICIDE FORMATION BY THIN-FILMS OF V ON SI AND SIO2 SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3304 - 3308

[6] SI-BEAM RADIATION CLEANING IN MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (05): : 564 - 567

[7] PSARAS PA, 1985, MATER RES SOC S P, V37, P585

[8] FORMATION OF VANADIUM SILICIDES AT THIN-FILM INTERFACES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5773 - 5781

[9] ETCHING OF SIO2-FILMS BY SI IN ULTRAHIGH-VACUUM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (03): : 534 - 538

[10] THADDEUS B, 1986, BINARY ALLOY PHASE D, V2, P2061

[1] CROKE ET, 1988, JUN EL MAT C BOULD

[2] SURFACE-MORPHOLOGY OF EPITAXIAL CAF2 FILMS ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (05) : 519 - 521

[3] HAUENSTEIN RJ, 1987, THESIS CALTECH

[4] HUANG CF, 1988, 2ND P INT S SIL MOL, P501

[5] KINETICS OF SILICIDE FORMATION BY THIN-FILMS OF V ON SI AND SIO2 SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3304 - 3308

[6] SI-BEAM RADIATION CLEANING IN MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (05): : 564 - 567

[7] PSARAS PA, 1985, MATER RES SOC S P, V37, P585

[8] FORMATION OF VANADIUM SILICIDES AT THIN-FILM INTERFACES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5773 - 5781

[9] ETCHING OF SIO2-FILMS BY SI IN ULTRAHIGH-VACUUM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (03): : 534 - 538

[10] THADDEUS B, 1986, BINARY ALLOY PHASE D, V2, P2061