GROWTH OF SUPERCONDUCTING V3SI ON SI BY MOLECULAR-BEAM EPITAXIAL TECHNIQUES

被引：5

作者：

CROKE, ET

HAUENSTEIN, RJ

MCGILL, TC

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 06期

关键词：

D O I：

10.1063/1.100621

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：514 / 516

页数：3

共 13 条

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