Electrochemical Formation of III-V Compound Semiconductor InSb

被引：0
|
作者：
Lee, Jeong Oh [1 ]
Lee, Jong Wook [1 ]
Lee, Kwan Hyi [1 ]
Jeung, Won Young [1 ]
Lee, Jong Yup [2 ]
机构：
[1] KIST, Mat Sci & Technol Div, Seoul 130650, South Korea
[2] R&D Div, URi Fine Plating, Chungbuk 361111, South Korea
来源：
JOURNAL OF THE KOREAN ELECTROCHEMICAL SOCIETY | 2005年 / 8卷 / 03期
关键词：
InSb; III-V Compound Semiconductor; Electrodeposition;
D O I：
10.5229/JKES.2005.8.3.135
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We investigated the electrochemical formation of a stoichiometric III-V compound semiconductor of InSb from an aqueous citric solution. Under an? optimized electrochemical condition, not like other research results, the electrodeposited InSb are satisfied exactly with the stoichiometry. Furthermore it retains the inherent characteristics of III-V compound semiconductor, InSb without heat treatment. EPMA, XPS and XRD were employed for confirmation of its composition/stoichiometry, chemical state, and crystallographic orientation, respectively.
引用
收藏
页码：135 / 138
页数：4
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