ELECTRICAL CHARACTERISTICS OF SPUTTERING-INDUCED DEFECTS IN TYPE-N SILICON

被引：18

作者：

ANDERSSON, LP ^{[1
]}

EVWARAYE, AO ^{[1
]}

机构：

[1] GE, CORP RES & DEV, SCHENECTADY, NY 12301 USA

来源：

VACUUM | 1978年 / 28卷 / 01期

关键词：

D O I：

10.1016/S0042-207X(78)80797-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5 / 7

页数：3

共 8 条

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[8] EFFECTS OF SPUTTERING DAMAGE ON CHARACTERISTICS OF MOLYBDENUM-SILICON SCHOTTKY-BARRIER DIODES [J].

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