TOTAL DOSE EFFECTS AT LOW-DOSE RATES

被引：14
作者：
JOHNSTON, AH [1 ]
ROESKE, SB [1 ]
机构：
[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期
关键词：
D O I：
10.1109/TNS.1986.4334628
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1487 / 1492
页数：6
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[1]   RADIATION RESPONSE OF 2 HARRIS SEMICONDUCTOR RADIATION HARDENED 1K CMOS RAMS [J].
ABARE, WE ;
HUFFMAN, DD ;
MOFFETT, GE .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :1712-1715
[2]   THE EFFECTS OF TEST CONDITIONS ON MOS RADIATION-HARDNESS RESULTS [J].
DRESSENDORFER, PV ;
SODEN, JM ;
HARRINGTON, JJ ;
NORDSTROM, TV .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4281-4287
[3]   SUPER RECOVERY OF TOTAL DOSE DAMAGE IN MOS DEVICES [J].
JOHNSTON, AH .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1427-1453
[4]   A RADIATION-HARDENED 16K-BIT MNOS EAROM [J].
KNOLL, MG ;
DELLIN, TA ;
JONES, RV .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4224-4228
[5]   A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES [J].
MCLEAN, FB .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1651-1657
[6]   A COMPARISON OF CONVENTIONAL CO-60 TESTING AND LOW DOSE ACCUMULATION-RATE EXPOSURE OF METAL-GATE CMOS ICS [J].
ROESKE, SB ;
EDWARDS, WH ;
ZIPAY, JW ;
PUARIEA, JW ;
GAMMILL, PE .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1582-1584
[7]   IRRADIATED SILICON GATE MOS DEVICE BIAS ANNEALING [J].
SCHWANK, JR ;
DAWES, WR .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4100-4104
[8]   PHYSICAL-MECHANISMS CONTRIBUTING TO DEVICE REBOUND [J].
SCHWANK, JR ;
WINOKUR, PS ;
MCWHORTER, PJ ;
SEXTON, FW ;
DRESSENDORFER, PV ;
TURPIN, DC .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1434-1438
[9]   RADIATION TESTING OF THE CMOS-8085 MICROPROCESSOR FAMILY [J].
SEXTON, FW ;
ANDERSON, RE ;
CORBETT, WT ;
GIDDINGS, AE ;
JORGENSEN, JL ;
KIM, WS ;
MNICH, TM ;
NORDSTROM, TV ;
OCHOA, A ;
SOBOLEWSKI, MA ;
TREECE, RK ;
WROBEL, TF .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4235-4239
[10]   INTERFACE-STATE GENERATION IN RADIATION-HARD OXIDES [J].
WINOKUR, PS ;
BOESCH, HE .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1647-1650
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