STRUCTURAL AND ELECTRONIC-PROPERTIES OF CVD SILICON FILMS NEAR THE CRYSTALLIZATION TEMPERATURE

被引:6
作者
MAGARINO, J
KAPLAN, D
BISARO, R
MORHANGE, JF
ZELLAMA, K
机构
[1] UNIV PARIS 06,PHYS SOLIDES LAB,F-75230 PARIS 05,FRANCE
[2] UNIV PARIS 07,ECOLE NORM SUPER,PHYS SOLIDES GRP,F-75221 PARIS 05,FRANCE
来源
JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC1期
关键词
D O I
10.1051/jphyscol:1982137
中图分类号
学科分类号
摘要
引用
收藏
页码:271 / 276
页数:6
相关论文
共 16 条
  • [11] DOPING EFFECTS ON POST-HYDROGENATED CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON
    MAGARINO, J
    KAPLAN, D
    FRIEDERICH, A
    DENEUVILLE, A
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (03): : 285 - 306
  • [12] POLYCRYSTALLINE-SILICON THIN-FILM TRANSISTORS ON GLASS
    MATSUI, M
    SHIRAKI, Y
    KATAYAMA, Y
    KOBAYASHI, KLI
    SHINTANI, A
    MARUYAMA, E
    [J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 936 - 937
  • [13] POST-HYDROGENATED CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON SCHOTTKY DIODES
    SZYDLO, N
    MAGARINO, J
    KAPLAN, D
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 5044 - 5051
  • [14] CURRENT TRANSPORT IN DOPED POLYCRYSTALLINE SILICON
    TANIGUCHI, M
    HIROSE, M
    OSAKA, Y
    HASEGAWA, S
    SHIMIZU, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (04) : 665 - 673
  • [15] ELECTRON-SPIN RESONANCE OF ULTRAHIGH-VACUUM EVAPORATED AMORPHOUS SILICON - INSITU AND EXSITU STUDIES
    THOMAS, PA
    BRODSKY, MH
    KAPLAN, D
    LEPINE, D
    [J]. PHYSICAL REVIEW B, 1978, 18 (07) : 3059 - 3073
  • [16] CRYSTALLIZATION IN AMORPHOUS-SILICON
    ZELLAMA, K
    GERMAIN, P
    SQUELARD, S
    BOURGOIN, JC
    THOMAS, PA
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6995 - 7000