OPTICAL CHARACTERISTICS OF SIO2 FORMED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF TETRAETHOXYSILANE

被引：24
|
作者：
ISHII, K [1 ]
OHKI, Y [1 ]
NISHIKAWA, H [1 ]
机构：
[1] TOKYO METROPOLITAN UNIV,DEPT ELECT ENGN,HACHIOJI,TOKYO 19203,JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 09期
关键词：
D O I：
10.1063/1.357196
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optical characteristics of thin SiO2 films deposited from tetraethoxysilane by the plasma-enhanced chemical-vapor-deposition method were studied using synchrotron radiation. When the deposition temperature is 600 degrees C, 7.6 eV absorption and 4.4 eV luminescence with a small decay constant (<3 ns) due to the oxygen vacancy (drop Si-Si drop) are observed. The decay curve of the 4.4 eV luminescence has the appearance of a stretched-exponential function. This indicates that the decay constant consists of widely distributed components, reflecting structural distortion of the film.
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页码：5418 / 5422
页数：5
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