TRANSPORT-EQUATIONS FOR THE ANALYSIS OF HEAVILY DOPED SEMICONDUCTOR-DEVICES

被引：70
作者：
LUNDSTROM, MS
SCHWARTZ, RJ
GRAY, JL
机构：
来源：
SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 03期
关键词：
D O I：
10.1016/0038-1101(81)90082-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：195 / 202
页数：8
相关论文
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